2024年6月6日发(作者：哀语儿)
元器件交易网
STB80PF55
P-CHANNEL 55V - 0.016 Ω - 80A D
2
PAK
STripFET™ II POWER MOSFET
PRELIMINARY DATA
TYPE
STB80PF55
s
s
s
s
V
DSS
55 V
R
DS(on)
< 0.018
Ω
I
D
80 A
TYPICAL R
DS
(on) = 0.016 Ω
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
APPLICATION ORIENTED
CHARACTERIZATION
1
3
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s
MOTOR CONTROL
s
DC-DC & DC-AC CONVERTERS
D
2
PAK
TO-263
(Suffix “T4”)
ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
(*)
I
D
I
DM
(
•)
P
tot
dv/dt
(1)
E
AS
(2)
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
Ω
)
Gate- source Voltage
Drain Current (continuos) at T
C
= 25°C
Drain Current (continuos) at T
C
= 100°C
Drain Current (pulsed)
Total Dissipation at T
C
= 25°C
Derating Factor
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Storage Temperature
Max. Operating Junction Temperature
Value
55
55
± 16
80
57
320
300
2
7
1.4
-55 to 175
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
°C
(
•)
Pulse width limited by safe operating area
(*) Current Limited by Package
Note: For the P-CHANNEL MOSFET actual polarity of voltages and
current has to be reversed
(1)I
SD
≤
40A, di/dt
≤
300A/µs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
(2) Starting T
j
= 25
o
C, I
D
= 80A, V
DD
= 40V
February 2002
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
1/7
元器件交易网
STB80PF55
THERMAL DATA
Rthj-case
Rthj-amb
T
l
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
Max
Max
Typ
0.5
62.5
300
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (T
case
= 25 °C unless otherwise specified)
OFF
Symbol
V
(BR)DSS
I
DSS
Parameter
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
Gate-body Leakage
Current (V
DS
= 0)
Test Conditions
I
D
= 250 µA, V
GS
= 0
V
DS
= Max Rating
V
DS
= Max Rating T
C
= 125°C
V
GS
= ± 16 V
Min.
55
1
10
±100
V
µA
µA
nA
I
GSS
ON
(*)
Symbol
V
GS(th)
R
DS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
V
DS
= V
GS
V
GS
= 10 V
I
D
= 250 µA
I
D
= 40 A
Min.
2
Typ.
3
0.016
Max.
4
0.018
Unit
V
Ω
DYNAMIC
Symbol
g
fs
C
iss
C
oss
C
rss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
V
DS
> I
D(on)
x R
DS(on)max,
I
D
=40 A
V
DS
= 25V, f = 1 MHz, V
GS
= 0
.
32
5500
1130
600
S
pF
pF
pF
2/7
2024年6月6日发(作者：哀语儿)
元器件交易网
STB80PF55
P-CHANNEL 55V - 0.016 Ω - 80A D
2
PAK
STripFET™ II POWER MOSFET
PRELIMINARY DATA
TYPE
STB80PF55
s
s
s
s
V
DSS
55 V
R
DS(on)
< 0.018
Ω
I
D
80 A
TYPICAL R
DS
(on) = 0.016 Ω
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
APPLICATION ORIENTED
CHARACTERIZATION
1
3
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s
MOTOR CONTROL
s
DC-DC & DC-AC CONVERTERS
D
2
PAK
TO-263
(Suffix “T4”)
ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
(*)
I
D
I
DM
(
•)
P
tot
dv/dt
(1)
E
AS
(2)
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
Ω
)
Gate- source Voltage
Drain Current (continuos) at T
C
= 25°C
Drain Current (continuos) at T
C
= 100°C
Drain Current (pulsed)
Total Dissipation at T
C
= 25°C
Derating Factor
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Storage Temperature
Max. Operating Junction Temperature
Value
55
55
± 16
80
57
320
300
2
7
1.4
-55 to 175
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
°C
(
•)
Pulse width limited by safe operating area
(*) Current Limited by Package
Note: For the P-CHANNEL MOSFET actual polarity of voltages and
current has to be reversed
(1)I
SD
≤
40A, di/dt
≤
300A/µs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
(2) Starting T
j
= 25
o
C, I
D
= 80A, V
DD
= 40V
February 2002
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
1/7
元器件交易网
STB80PF55
THERMAL DATA
Rthj-case
Rthj-amb
T
l
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
Max
Max
Typ
0.5
62.5
300
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (T
case
= 25 °C unless otherwise specified)
OFF
Symbol
V
(BR)DSS
I
DSS
Parameter
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
Gate-body Leakage
Current (V
DS
= 0)
Test Conditions
I
D
= 250 µA, V
GS
= 0
V
DS
= Max Rating
V
DS
= Max Rating T
C
= 125°C
V
GS
= ± 16 V
Min.
55
1
10
±100
V
µA
µA
nA
I
GSS
ON
(*)
Symbol
V
GS(th)
R
DS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
V
DS
= V
GS
V
GS
= 10 V
I
D
= 250 µA
I
D
= 40 A
Min.
2
Typ.
3
0.016
Max.
4
0.018
Unit
V
Ω
DYNAMIC
Symbol
g
fs
C
iss
C
oss
C
rss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
V
DS
> I
D(on)
x R
DS(on)max,
I
D
=40 A
V
DS
= 25V, f = 1 MHz, V
GS
= 0
.
32
5500
1130
600
S
pF
pF
pF
2/7