AO4803A中文资料-USB迷|专注于互联网分享

2024年2月25日发(作者：曹春柔)

元器件交易网4803ADual P-Channel Enhancement Mode Field Effect TransistorGeneral DescriptionThe AO4803A uses advanced trench technology to

provide excellent RDS(ON)

with

low gate charge. This

device is suitable for use as a load switch or in PWM

applications. Standard Product AO4803A is Pb-free

(meets ROHS & Sony 259 specifications)FeaturesVDS (V) = -30VID = -5 A (VGS = -10V)RDS(ON)

< 46mΩ (VGS = -10V)RDS(ON) < 74mΩ (VGS = -4.5V) UIS TESTED! Rg,Ciss,Coss,Crss Tested!SOIC-8Top ViewS2G2S1G112348765D2D2D1D1D1 D2

Absolute Maximum Ratings TA=25°C unless otherwise notedParameterSymbolVDSDrain-Source VoltageVGSGate-Source VoltageContinuous Drain

Current

AFPulsed Drain Current

BTA=25°CPower DissipationAvalanche Current

BTA=70°CTA=25°CTA=70°CIDIDMPDIAREARTJ, TSTGMaximum-30±20-5-4-3021.31118-55 to 150UnitsVVAWAmJ°CRepetitive avalanche energy 0.3mH

BJunction and Storage Temperature RangeThermal CharacteristicsParameterMaximum Junction-to-Ambient

AMaximum Junction-to-Ambient

AMaximum Junction-to-Lead

CSymbolt ≤ 10sSteady-StateSteady-StateRθJARθJLTyp487435Max62.511040Units°C/W°C/W°C/WAlpha & Omega Semiconductor,

元器件交易网4803AElectrical Characteristics (TJ=25°C unless otherwise noted)SymbolParameterConditionsID=-250µA, VGS=0V

VDS=-30V, VGS=0V

TJ=55°CVDS=0V, VGS=±20VVDS=VGS

ID=-250µAVGS=-10V, VDS=-5VVGS=-10V, ID=5.0A

RDS(ON)gFSVSDISStatic Drain-Source On-ResistanceVGS=-4.5V, ID=-4A

Forward TransconductanceVDS=-5V, ID=-5ADiode Forward VoltageIS=-1A,VGS=0VMaximum Body-Diode Continuous CurrentTJ=125°C-1.5-3037526011-0.77-1-2668VGS=0V, VDS=-15V, f=1MHzVGS=0V, VDS=0V, f=1MHz12692612.7VGS=-10V, VDS=-15V, ID=-5A6.4247.7VGS=-10V, VDS=-15V, RL=3Ω,

RGEN=3ΩIF=-5A, dI/dt=100A/µs6.82830466874-2Min-30-1-5±100-2.5TypMaxUnitsVµAnAVAmΩmΩSVApFpFpFΩnCnCnCnCnsnsnsnsnsnCSTATIC PARAMETERSBVDSSDrain-Source Breakdown VoltageIDSSIGSSVGS(th)ID(ON)Zero Gate Voltage Drain CurrentGate-Body leakage currentGate Threshold VoltageOn state drain currentDYNAMIC PARAMETERSCissInput CapacitanceCossOutput CapacitanceCrssRgReverse Transfer CapacitanceGate resistanceSWITCHING PARAMETERSQg

(10V)Total Gate Charge (10V)Qg

(4.5V)Total Gate Charge (4.5V)QgsQgdtD(on)trtD(off)tftrrQrrGate Source ChargeGate Drain ChargeTurn-On DelayTimeTurn-On Rise TimeTurn-Off DelayTimeTurn-Off Fall TimeBody Diode Reverse Recovery TimeBody Diode Reverse Recovery ChargeIF=-5A, dI/dt=100A/µsA: The value of R

θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with

A=25°C. The value in any given application depends on the user's specific board design.

B: Repetitive rating, pulse width limited by junction temperature.C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T

A=25°C. The SOA

curve provides a single pulse rating.

F. The current rating is based on the t≤ 10s junction to ambient thermal resistance 0: Feb 2007THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISINGOUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT & Omega Semiconductor,

元器件交易网4803ATYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS4035-10V-8V-5V3025-4.5V)(A

D20-4V-I15VGS=-3.5V1050012345-VDS (Volts)Figure 1: On-Region Characteristics10080)VΩGS=-4.5Vm(

)NO60(DSRVGS=-10V4020024IF6=-6.5A, dI/dt=100A/810-ID (A)Figure 3: On-Resistance vs. Drain Current and GateVoltage160140ID=-5A120)Ωm100(

)NO(80125°CTHIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

DSR25°CCOMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING60OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,40-40°CFUNCTIONS AND RELIABILITY WITHOUT NOTICE.20246810-VGS (Volts)Figure 5: On-Resistance vs. Gate-Source VoltageAlpha & Omega Semiconductor, Ltd.10VDS=-5V86125°C)(AD-I425°C2-40°C0012345-VGS(Volts)Figure 2: Transfer Characteristics1.6VGS=-10Ve1.4IcD=-5Anatsise1.2V-RGS=-4.5VnOID=-4A

dez1.0ilamroN0.80.6-50Temperature (°C)Figure 4: On-Resistance vs. Junction Temperature1E+011E+001E-01125°C)1E-02(A

-IS1E-031E-0425°C-40°C1E-051E-060.00.20.40.60.81.01.2-VSD (Volts)Figure 6: Body-Diode µs

元器件交易网4803ATYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS108-VGS

(Volts)642003691215-Qg (nC)Figure 7: Gate-Charge CharacteristicsVDS=-15VID=-5A12001000CissCapacitance

(pF)800600400Coss200Crss0-VDS (Volts)Figure 8: Capacitance Characteristics10040TJ(Max)=150°CTA=25°C-ID

(Amps)100µs1msPower

(W)10RDS(ON)

limited30201TJ(Max)=150°CTA=25°CDC0.10.1110ms100ms1s10s10µsIF=-6.5A, dI/dt=100A/10100-VDS (Volts)00.0010.010.Figure 9: Maximum Forward Biased Safe

Operating Area (Note E)Pulse Width (s)Figure 10: Single Pulse Power Rating Junction-to-Ambient (Note E)10ZθJA

Normalized

Transient

Thermal

ResistanceIn descending orderD=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse10.1THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

PDCOMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISINGD=Ton/TOUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,TJ,PK=TA+PDM.ZθJA.RθJA0.01TonR=110°C/WFUNCTIONS AND RELIABILITY WITHOUT NOTICE.TθJASingle Pulse0.0010.000010.00010.0010.010.Pulse Width (s)Figure 11: Normalized Maximum Transient Thermal Impedance(Note E)Alpha & Omega Semiconductor,