2024年4月8日发(作者：员晓曼)
元器件交易网
TPA2012D2
YZHRTJ
SLOS438C–DECEMBER2004–REVISEDMARCH2007
2.1W/CHSTEREOFILTER-FREECLASS-DAUDIOPOWERAMPLIFIER
FEATURES
•OutputPowerByPackage:
–QFN:
–2.1W/ChInto4Ωat5V
–1.4W/ChInto8Ωat5V
–720mW/ChInto8Ωat3.6V
–WCSP:
–1.2W/ChInto4Ωat5V
(1)
–1.3W/ChInto8Ωat5V
–720mW/ChInto8Ωat3.6V
OnlyTwoExternalComponentsRequired
PowerSupplyRange:2.5Vto5.5V
IndependentShutdownControlforEach
Channel
SelectableGainof6,12,18,and24dB
InternalPulldownResistorOnShutdownPins
HighPSRR:77dBat217Hz
FastStartupTime(3.5ms)
LowSupplyCurrent
LowShutdownCurrent
Short-CircuitandThermalProtection
SpaceSavingPackages
–2,01mmX2,01mmNanoFree™WCSP
(YZH)
–4mmX4mmThinQFN(RTJ)with
PowerPAD™
Thermallylimited
2.50
WCSP Thermally Limited Region
2
V
DD
= 2.5 V, 1%
V
DD
= 2.5 V, 10%
1.50
V
DD
= 3.6 V, 1%
V
DD
= 3.6 V, 10%
V
DD
= 5 V, 1%
1
V
DD
= 3.6 V, 10%
APPLICATIONS
•
•
•
•
•
•
•
WirelessorCellularHandsetsandPDAs
PortableDVDPlayer
NotebookPC
PortableRadio
PortableGaming
EducationalToys
USBSpeakers
DESCRIPTION
TheTPA2012D2isastereo,filter-free,Class-D
audioamplifier(class-Damp)availableinaWCSP,
QFN,2012D2only
requirestwoexternalcomponentsforoperation.
TheTPA2012D2featuresindependentshutdown
ncanbeselected
to6,12,18,or24dButilizingtheG0andG1gain
RRanddifferentialarchitecture
provideincreasedimmunitytonoiseandRF
tiontothesefeatures,afast
startuptimeandsmallpackagesizemakethe
TPA2012D2class-Dampanidealchoiceforboth
cellularhandsetsandPDAs.
•
•
•
•
•
•
•
•
•
•
•
(1)
P
O
−
O
u
t
p
u
t
P
o
w
e
r
−
W
0.50
0
491419242934
R
L
− Load Resistance − W
Pleasebeawarethatanimportantnoticeconcerningavailability,standardwarranty,anduseincriticalapplicationsofTexas
Instrumentssemiconductorproductsanddisclaimerstheretoappearsattheendofthisdatasheet.
NanoFree,PowerPADaretrademarksofTexasInstruments.
PRODUCTIONDATAinformationiscurrentasofpublicationdate.
ProductsconformtospecificationsperthetermsoftheTexas
tionprocessingdoesnot
necessarilyincludetestingofallparameters.
Copyright©2004–2007,TexasInstrumentsIncorporated
元器件交易网
TPA2012D2
SLOS438C–DECEMBER2004–REVISEDMARCH2007
dsshouldbeshortedtogetherorthedeviceplacedinconductivefoam
duringstorageorhandlingtopreventelectrostaticdamagetotheMOSgates.
DESCRIPTION(CONTINUED)
TheTPA2012D2iscapableofdriving1.4W/Chat5Vor720mW/Chat3.6Vinto8Ω.TheTPA2012D2isalso
capableofdriving4Ω.TheTPA2012D2isthermallylimitedinWCSPandmaynotachieve2.1W/Chfor4Ω.
Themaximumoutputpowe
outputpowerversusloadresistancegraphbelowshowsthermallylimitedregionoftheWCSPinrelationtothe
2012D2providesthermalandshortcircuitprotection.
AVAILABLEOPTIONS
T
A
–40°Cto85°C
PACKAGE
2mmx2mm,16-ballWCSP(YZH)
4mmx4mm,20-pinQFN(RTJ)
PARTNUMBER
TPA2012D2YZH
TPA2012D2RTJ
SYMBOL
AKR
AKS
ABSOLUTEMAXIMUMRATINGS
overoperatingfree-airtemperature(unlessotherwisenoted)
(1)
VALUE
V
SS
V
I
T
A
T
J
T
stg
(1)
Supplyvoltage,AVDD,PVDD
Inputvoltage
Continuoustotalpowerdissipation
Operatingfree-airtemperaturerange
Operatingjunctiontemperaturerange
Storagetemperaturerange
Inactivemode
Inshutdownmode
–0.3to6.0
–0.3to7.0
–0.3toV
DD
+0.3
SeeDissipationRatingTable
–40to85
–40to150
–65to85
°C
°C
°C
UNIT
V
V
V
Stressesbeyondthoselistrestressratings
only,andfunctionaloperationofthedeviceattheseoranyotherconditionsbeyondthoseindicatedunderrecommendedoperating
retoabsolute-maximum-ratedconditionsforextendedperiodsmayaffectdevicereliability.
DISSIPATIONRATINGTABLE
PACKAGE
RTJ
YZH
(1)
T
A
=25°C
POWERRATING
(1)
5.2W
1.2W
DERATING
FACTOR
41.6mW/°C
9.12mW/°C
T
A
=75°C
POWERRATING
3.12W
690mW
T
A
=85°C
POWERRATING
2.7W
600mW
Thisdatawastakenusing2oztraceandcopperpadthatissoldereddirectlytoaJEDECstandard4-layer3in×3inPCB.
RECOMMENDEDOPERATINGCONDITIONS
MIN
V
SS
V
IH
V
IL
T
A
Supplyvoltage
High-levelinputvoltage
Low-levelinputvoltage
AVDD,PVDD
SDL,SDR,G0,G1
SDL,SDR,G0,G1
÷40
2.5
1.3
0.35
85
MAX
5.5
UNIT
V
V
V
°COperatingfree-airtemperature
2
SubmitDocumentationFeedback
2024年4月8日发(作者：员晓曼)
元器件交易网
TPA2012D2
YZHRTJ
SLOS438C–DECEMBER2004–REVISEDMARCH2007
2.1W/CHSTEREOFILTER-FREECLASS-DAUDIOPOWERAMPLIFIER
FEATURES
•OutputPowerByPackage:
–QFN:
–2.1W/ChInto4Ωat5V
–1.4W/ChInto8Ωat5V
–720mW/ChInto8Ωat3.6V
–WCSP:
–1.2W/ChInto4Ωat5V
(1)
–1.3W/ChInto8Ωat5V
–720mW/ChInto8Ωat3.6V
OnlyTwoExternalComponentsRequired
PowerSupplyRange:2.5Vto5.5V
IndependentShutdownControlforEach
Channel
SelectableGainof6,12,18,and24dB
InternalPulldownResistorOnShutdownPins
HighPSRR:77dBat217Hz
FastStartupTime(3.5ms)
LowSupplyCurrent
LowShutdownCurrent
Short-CircuitandThermalProtection
SpaceSavingPackages
–2,01mmX2,01mmNanoFree™WCSP
(YZH)
–4mmX4mmThinQFN(RTJ)with
PowerPAD™
Thermallylimited
2.50
WCSP Thermally Limited Region
2
V
DD
= 2.5 V, 1%
V
DD
= 2.5 V, 10%
1.50
V
DD
= 3.6 V, 1%
V
DD
= 3.6 V, 10%
V
DD
= 5 V, 1%
1
V
DD
= 3.6 V, 10%
APPLICATIONS
•
•
•
•
•
•
•
WirelessorCellularHandsetsandPDAs
PortableDVDPlayer
NotebookPC
PortableRadio
PortableGaming
EducationalToys
USBSpeakers
DESCRIPTION
TheTPA2012D2isastereo,filter-free,Class-D
audioamplifier(class-Damp)availableinaWCSP,
QFN,2012D2only
requirestwoexternalcomponentsforoperation.
TheTPA2012D2featuresindependentshutdown
ncanbeselected
to6,12,18,or24dButilizingtheG0andG1gain
RRanddifferentialarchitecture
provideincreasedimmunitytonoiseandRF
tiontothesefeatures,afast
startuptimeandsmallpackagesizemakethe
TPA2012D2class-Dampanidealchoiceforboth
cellularhandsetsandPDAs.
•
•
•
•
•
•
•
•
•
•
•
(1)
P
O
−
O
u
t
p
u
t
P
o
w
e
r
−
W
0.50
0
491419242934
R
L
− Load Resistance − W
Pleasebeawarethatanimportantnoticeconcerningavailability,standardwarranty,anduseincriticalapplicationsofTexas
Instrumentssemiconductorproductsanddisclaimerstheretoappearsattheendofthisdatasheet.
NanoFree,PowerPADaretrademarksofTexasInstruments.
PRODUCTIONDATAinformationiscurrentasofpublicationdate.
ProductsconformtospecificationsperthetermsoftheTexas
tionprocessingdoesnot
necessarilyincludetestingofallparameters.
Copyright©2004–2007,TexasInstrumentsIncorporated
元器件交易网
TPA2012D2
SLOS438C–DECEMBER2004–REVISEDMARCH2007
dsshouldbeshortedtogetherorthedeviceplacedinconductivefoam
duringstorageorhandlingtopreventelectrostaticdamagetotheMOSgates.
DESCRIPTION(CONTINUED)
TheTPA2012D2iscapableofdriving1.4W/Chat5Vor720mW/Chat3.6Vinto8Ω.TheTPA2012D2isalso
capableofdriving4Ω.TheTPA2012D2isthermallylimitedinWCSPandmaynotachieve2.1W/Chfor4Ω.
Themaximumoutputpowe
outputpowerversusloadresistancegraphbelowshowsthermallylimitedregionoftheWCSPinrelationtothe
2012D2providesthermalandshortcircuitprotection.
AVAILABLEOPTIONS
T
A
–40°Cto85°C
PACKAGE
2mmx2mm,16-ballWCSP(YZH)
4mmx4mm,20-pinQFN(RTJ)
PARTNUMBER
TPA2012D2YZH
TPA2012D2RTJ
SYMBOL
AKR
AKS
ABSOLUTEMAXIMUMRATINGS
overoperatingfree-airtemperature(unlessotherwisenoted)
(1)
VALUE
V
SS
V
I
T
A
T
J
T
stg
(1)
Supplyvoltage,AVDD,PVDD
Inputvoltage
Continuoustotalpowerdissipation
Operatingfree-airtemperaturerange
Operatingjunctiontemperaturerange
Storagetemperaturerange
Inactivemode
Inshutdownmode
–0.3to6.0
–0.3to7.0
–0.3toV
DD
+0.3
SeeDissipationRatingTable
–40to85
–40to150
–65to85
°C
°C
°C
UNIT
V
V
V
Stressesbeyondthoselistrestressratings
only,andfunctionaloperationofthedeviceattheseoranyotherconditionsbeyondthoseindicatedunderrecommendedoperating
retoabsolute-maximum-ratedconditionsforextendedperiodsmayaffectdevicereliability.
DISSIPATIONRATINGTABLE
PACKAGE
RTJ
YZH
(1)
T
A
=25°C
POWERRATING
(1)
5.2W
1.2W
DERATING
FACTOR
41.6mW/°C
9.12mW/°C
T
A
=75°C
POWERRATING
3.12W
690mW
T
A
=85°C
POWERRATING
2.7W
600mW
Thisdatawastakenusing2oztraceandcopperpadthatissoldereddirectlytoaJEDECstandard4-layer3in×3inPCB.
RECOMMENDEDOPERATINGCONDITIONS
MIN
V
SS
V
IH
V
IL
T
A
Supplyvoltage
High-levelinputvoltage
Low-levelinputvoltage
AVDD,PVDD
SDL,SDR,G0,G1
SDL,SDR,G0,G1
÷40
2.5
1.3
0.35
85
MAX
5.5
UNIT
V
V
V
°COperatingfree-airtemperature
2
SubmitDocumentationFeedback