2024年4月7日发(作者：依语雪)
元器件交易网
SGSD100
SGSD200
COMPLEMENTARYSILICON
POWERDARLINGTONTRANSISTORS
s
s
s
SGS-THOMSONPREFERREDSALESTYPES
COMPLEMENTARYPNP-NPNDEVICES
MONOLITHICDARLINGTON
CONFIGURATION
APPLICATIONS:
s
GENERALPURPOSESWITCHING
APPLICATION
s
GENERALPURPOSEAMPLIFIERS
DESCRIPTION
TheSGSD100issiliconepitaxial-baseNPN
powertransistorinmonolithicDarlington
configurationmountedinTO-218plastic
package.
Itisintededforuseingeneralpurposeandhigh
currentamplifierapplications.
ThecomplementaryPNPtypeistheSGSD200.
1
3
2
TO-218
INTERNALSCHEMATICDIAGRAM
ABSOLUTEMAXIMUMRATINGS
SymbolParameter
NPN
PNP
V
CBO
V
CEO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
Collector-BaseVoltage(I
E
=0)
Collector-EmitterVoltage(I
B
=0)
CollectorCurrent
CollectorPeakCurrent
BaseCurrent
BasePeakCurrent
TotalDissipationatT
c
≤25
o
C
StorageTemperature
ingJunctionTemperature
Value
SGSD100
SGSD200
80
80
25
40
6
10
130
-65to150
150
V
V
A
A
A
A
W
o
o
Unit
C
C
ForPNPtypesvoltageandcurrentvaluesarenegative.
September1997
1/6
元器件交易网
SGSD100/SGSD200
THERMALDATA
R
thj-case
ThermalResistanceJunction-case
o
Max0.96
o
C/W
ELECTRICALCHARACTERISTICS(T
case
=25Cunlessotherwisespecified)
Symbol
I
CBO
I
CEV
I
CEO
I
EBO
Parameter
CollectorCut-off
Current(I
E
=0)
CollectorCut-off
Current(V
BE
=-0.3V)
CollectorCut-off
Current(I
B
=0)
TestConditions
V
CE
=80V
V
CE
=80V
V
CE
=80V
V
CE
=80V
V
CE
=60V
V
CE
=60V
T
c
=100C
T
c
=100C
T
c
=100C
o
o
o
.
0.5
1.5
0.1
2
0.5
1.5
2
Unit
mA
mA
mA
mA
mA
mA
mA
V
EmitterCut-offCurrent
V
EB
=5V
(I
C
=0)
I
C
=50mA
I
C
I
C
I
C
I
C
I
C
I
C
=
=
=
=
=
=
5A
5A
10A
10A
20A
20A
I
B
I
B
I
B
I
B
I
B
I
B
=20
=20
=40
=40
=80
=80
mA
mA
mA
mA
mA
mA
80
0.95
0.8
1.2
1.3
2
2.3
2.6
2.5
1
600
500
300
1.8
1.6
5000
8000
4000
8000
2000
2000
1.2
0.85
1.6
1.4
2.3
1.3
T
c
=100C
o
V
CEO(sus)
∗Collector-Emitter
SustainingVoltage
V
CE(sat)
∗Collector-Emitter
SaturationVoltage
T
c
=100C
T
c
=100C
T
c
=100C
T
c
=100C
T
c
=100
o
C
T
c
=100C
T
c
=100C
T
c
=100C
o
o
o
o
o
o
o
1.2
1.75
3.5
3.3
3
15000
12000
6000
V
V
V
V
V
V
V
V
V
V
V
BE(sat)
∗
V
BE
∗
h
FE
∗
Base-Emitter
SaturationVoltage
Base-EmitterVoltage
DCCurrentGain
I
C
=20A
I
C
=20A
I
C
=10A
I
C
=10A
I
C
I
C
I
C
I
C
I
C
I
C
=
=
=
=
=
=
=
=
=
=
=
=
5A
5A
10A
10A
20A
20A
5A
5A
10A
10A
20A
20A
I
B
=80mA
I
B
=80mA
V
CE
=3V
V
CE
=3V
V
CE
V
CE
V
CE
V
CE
V
CE
V
CE
=
=
=
=
=
=
3
3
3
3
3
3
V
V
V
V
V
V
o
V
F
∗DiodeForwardVoltageI
F
I
F
I
F
I
F
I
F
I
F
SecondBreakdown
Energy
SecondBreakdown
Current
T
c
=100C
T
c
=100
o
C
T
c
=100
o
C
250
250
6
V
V
V
V
V
V
mJ
mJ
A
E
s/b
I
s/b
V
CC
=30VL=3mH
V
CC
=30VL=3mH
V
CE
=25Vt=500ms
∗ Pulsed:Pulseduration=300µs,dutycycle1.5%
ForPNPtypevoltageandcurrentvaluesarenegative.
2/6
2024年4月7日发(作者：依语雪)
元器件交易网
SGSD100
SGSD200
COMPLEMENTARYSILICON
POWERDARLINGTONTRANSISTORS
s
s
s
SGS-THOMSONPREFERREDSALESTYPES
COMPLEMENTARYPNP-NPNDEVICES
MONOLITHICDARLINGTON
CONFIGURATION
APPLICATIONS:
s
GENERALPURPOSESWITCHING
APPLICATION
s
GENERALPURPOSEAMPLIFIERS
DESCRIPTION
TheSGSD100issiliconepitaxial-baseNPN
powertransistorinmonolithicDarlington
configurationmountedinTO-218plastic
package.
Itisintededforuseingeneralpurposeandhigh
currentamplifierapplications.
ThecomplementaryPNPtypeistheSGSD200.
1
3
2
TO-218
INTERNALSCHEMATICDIAGRAM
ABSOLUTEMAXIMUMRATINGS
SymbolParameter
NPN
PNP
V
CBO
V
CEO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
Collector-BaseVoltage(I
E
=0)
Collector-EmitterVoltage(I
B
=0)
CollectorCurrent
CollectorPeakCurrent
BaseCurrent
BasePeakCurrent
TotalDissipationatT
c
≤25
o
C
StorageTemperature
ingJunctionTemperature
Value
SGSD100
SGSD200
80
80
25
40
6
10
130
-65to150
150
V
V
A
A
A
A
W
o
o
Unit
C
C
ForPNPtypesvoltageandcurrentvaluesarenegative.
September1997
1/6
元器件交易网
SGSD100/SGSD200
THERMALDATA
R
thj-case
ThermalResistanceJunction-case
o
Max0.96
o
C/W
ELECTRICALCHARACTERISTICS(T
case
=25Cunlessotherwisespecified)
Symbol
I
CBO
I
CEV
I
CEO
I
EBO
Parameter
CollectorCut-off
Current(I
E
=0)
CollectorCut-off
Current(V
BE
=-0.3V)
CollectorCut-off
Current(I
B
=0)
TestConditions
V
CE
=80V
V
CE
=80V
V
CE
=80V
V
CE
=80V
V
CE
=60V
V
CE
=60V
T
c
=100C
T
c
=100C
T
c
=100C
o
o
o
.
0.5
1.5
0.1
2
0.5
1.5
2
Unit
mA
mA
mA
mA
mA
mA
mA
V
EmitterCut-offCurrent
V
EB
=5V
(I
C
=0)
I
C
=50mA
I
C
I
C
I
C
I
C
I
C
I
C
=
=
=
=
=
=
5A
5A
10A
10A
20A
20A
I
B
I
B
I
B
I
B
I
B
I
B
=20
=20
=40
=40
=80
=80
mA
mA
mA
mA
mA
mA
80
0.95
0.8
1.2
1.3
2
2.3
2.6
2.5
1
600
500
300
1.8
1.6
5000
8000
4000
8000
2000
2000
1.2
0.85
1.6
1.4
2.3
1.3
T
c
=100C
o
V
CEO(sus)
∗Collector-Emitter
SustainingVoltage
V
CE(sat)
∗Collector-Emitter
SaturationVoltage
T
c
=100C
T
c
=100C
T
c
=100C
T
c
=100C
T
c
=100
o
C
T
c
=100C
T
c
=100C
T
c
=100C
o
o
o
o
o
o
o
1.2
1.75
3.5
3.3
3
15000
12000
6000
V
V
V
V
V
V
V
V
V
V
V
BE(sat)
∗
V
BE
∗
h
FE
∗
Base-Emitter
SaturationVoltage
Base-EmitterVoltage
DCCurrentGain
I
C
=20A
I
C
=20A
I
C
=10A
I
C
=10A
I
C
I
C
I
C
I
C
I
C
I
C
=
=
=
=
=
=
=
=
=
=
=
=
5A
5A
10A
10A
20A
20A
5A
5A
10A
10A
20A
20A
I
B
=80mA
I
B
=80mA
V
CE
=3V
V
CE
=3V
V
CE
V
CE
V
CE
V
CE
V
CE
V
CE
=
=
=
=
=
=
3
3
3
3
3
3
V
V
V
V
V
V
o
V
F
∗DiodeForwardVoltageI
F
I
F
I
F
I
F
I
F
I
F
SecondBreakdown
Energy
SecondBreakdown
Current
T
c
=100C
T
c
=100
o
C
T
c
=100
o
C
250
250
6
V
V
V
V
V
V
mJ
mJ
A
E
s/b
I
s/b
V
CC
=30VL=3mH
V
CC
=30VL=3mH
V
CE
=25Vt=500ms
∗ Pulsed:Pulseduration=300µs,dutycycle1.5%
ForPNPtypevoltageandcurrentvaluesarenegative.
2/6