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BD940中文资料

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2024年9月19日发(作者:殳冰双)

元器件交易网

INCHANGE Semiconductor

isc

Product Specification

isc

Silicon PNP Power Transistor

BD934/936/938/940/942

DESCRIPTION

·DC Current Gain-

: h

FE

= 40(Min)@ I

C

= -150mA

·Complement to Type BD933/935/937/939/941

APPLICATIONS

·Designed for use in output stages of audio and television

amplifier circuits where high peak powers can occur.

ABSOLUTE MAXIMUM RATINGS(T

a

=25

℃)

SYMBOL PARAMETER VALUE UNIT

BD934-45

BD936-60

V

CBO

Collector-Base Voltage

BD938-100

V

BD940-120

BD942-140

BD934-45

BD936-60

V

CEO

Collector-Emitter Voltage

BD938-80

V

BD940-100

BD942-120

V

EBO

Emitter-Base Voltage -5 V

I

C

Collector Current-Continuous -3 A

I

CM

Collector Current-Peak -7 A

I

B

Base Current-Continuous -0.5 A

P

Collector Power Dissipation

C

@ T

C

=25℃

30 W

T

J

Junction Temperature 150

T

stg

Storage Temperature Range -65~150

THERMAL CHARACTERISTICS

SYMBOL PARAMETER MAXUNIT

R

th j-c

Thermal Resistance,Junction to Case 4.17

℃/W

R

th j-a

Thermal Resistance,Junction to Ambient70

℃/W

isc Website:

元器件交易网

INCHANGE Semiconductor

isc

Product Specification

isc

Silicon PNP Power Transistor

ELECTRICAL CHARACTERISTICS

T

C

=25℃ unless otherwise specified

SYMBOL PARAMETER

BD934/936/938/940/942

CONDITIONS MIN TYP. MAXUNIT

BD934 -45

BD936 -60

V

CEO(SUS)

Collector-Emitter

Sustaining Voltage

I

C

= -100mA ; I

B

= 0 V

BD938 -80

BD940 -100

BD942

V

CE(

sat

)

V

BE(

on

)

I

CBO

I

CEO

I

EBO

h

FE-1

h

FE-2

f

T

Collector-Emitter Saturation Voltage

Base-Emitter On Voltage

Collector Cutoff Current

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

DC Current Gain

Current-Gain—Bandwidth Product

I

C

= -1A; I

B

= -0.1A

-120

40

-0.6

-1.3

-0.05

-1

-0.1

-0.2

250

V

V

mA

mA

mA

I

C

= -1A; V

CE

= -2V

V

CB

= V

CBOmax

; I

E

= 0

V

CB

= V

CBOmax

; I

E

= 0,T

J

=150℃

V

CE

= V

CEOmax

; I

B

= 0

V

EB

= -5V; I

C

= 0

I

C

= -150mA ; V

CE

= -2V

I

C

= -1A ; V

CE

= -2V

I

C

= -250mA ; V

CE

= -10V

25

3 MHz

Switching Times

t

on

t

off

Turn-On Time

I

C

= -1.0A; I

B1

= -I

B2

= -0.1A

Turn-Off Time 0.7 2.4 μs

0.2 0.6 μs

isc Website:

2

2024年9月19日发(作者:殳冰双)

元器件交易网

INCHANGE Semiconductor

isc

Product Specification

isc

Silicon PNP Power Transistor

BD934/936/938/940/942

DESCRIPTION

·DC Current Gain-

: h

FE

= 40(Min)@ I

C

= -150mA

·Complement to Type BD933/935/937/939/941

APPLICATIONS

·Designed for use in output stages of audio and television

amplifier circuits where high peak powers can occur.

ABSOLUTE MAXIMUM RATINGS(T

a

=25

℃)

SYMBOL PARAMETER VALUE UNIT

BD934-45

BD936-60

V

CBO

Collector-Base Voltage

BD938-100

V

BD940-120

BD942-140

BD934-45

BD936-60

V

CEO

Collector-Emitter Voltage

BD938-80

V

BD940-100

BD942-120

V

EBO

Emitter-Base Voltage -5 V

I

C

Collector Current-Continuous -3 A

I

CM

Collector Current-Peak -7 A

I

B

Base Current-Continuous -0.5 A

P

Collector Power Dissipation

C

@ T

C

=25℃

30 W

T

J

Junction Temperature 150

T

stg

Storage Temperature Range -65~150

THERMAL CHARACTERISTICS

SYMBOL PARAMETER MAXUNIT

R

th j-c

Thermal Resistance,Junction to Case 4.17

℃/W

R

th j-a

Thermal Resistance,Junction to Ambient70

℃/W

isc Website:

元器件交易网

INCHANGE Semiconductor

isc

Product Specification

isc

Silicon PNP Power Transistor

ELECTRICAL CHARACTERISTICS

T

C

=25℃ unless otherwise specified

SYMBOL PARAMETER

BD934/936/938/940/942

CONDITIONS MIN TYP. MAXUNIT

BD934 -45

BD936 -60

V

CEO(SUS)

Collector-Emitter

Sustaining Voltage

I

C

= -100mA ; I

B

= 0 V

BD938 -80

BD940 -100

BD942

V

CE(

sat

)

V

BE(

on

)

I

CBO

I

CEO

I

EBO

h

FE-1

h

FE-2

f

T

Collector-Emitter Saturation Voltage

Base-Emitter On Voltage

Collector Cutoff Current

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

DC Current Gain

Current-Gain—Bandwidth Product

I

C

= -1A; I

B

= -0.1A

-120

40

-0.6

-1.3

-0.05

-1

-0.1

-0.2

250

V

V

mA

mA

mA

I

C

= -1A; V

CE

= -2V

V

CB

= V

CBOmax

; I

E

= 0

V

CB

= V

CBOmax

; I

E

= 0,T

J

=150℃

V

CE

= V

CEOmax

; I

B

= 0

V

EB

= -5V; I

C

= 0

I

C

= -150mA ; V

CE

= -2V

I

C

= -1A ; V

CE

= -2V

I

C

= -250mA ; V

CE

= -10V

25

3 MHz

Switching Times

t

on

t

off

Turn-On Time

I

C

= -1.0A; I

B1

= -I

B2

= -0.1A

Turn-Off Time 0.7 2.4 μs

0.2 0.6 μs

isc Website:

2

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