2024年9月19日发(作者:殳冰双)
元器件交易网
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistor
BD934/936/938/940/942
DESCRIPTION
·DC Current Gain-
: h
FE
= 40(Min)@ I
C
= -150mA
·Complement to Type BD933/935/937/939/941
APPLICATIONS
·Designed for use in output stages of audio and television
amplifier circuits where high peak powers can occur.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL PARAMETER VALUE UNIT
BD934-45
BD936-60
V
CBO
Collector-Base Voltage
BD938-100
V
BD940-120
BD942-140
BD934-45
BD936-60
V
CEO
Collector-Emitter Voltage
BD938-80
V
BD940-100
BD942-120
V
EBO
Emitter-Base Voltage -5 V
I
C
Collector Current-Continuous -3 A
I
CM
Collector Current-Peak -7 A
I
B
Base Current-Continuous -0.5 A
P
Collector Power Dissipation
C
@ T
C
=25℃
30 W
T
J
Junction Temperature 150
℃
T
stg
Storage Temperature Range -65~150
℃
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAXUNIT
R
th j-c
Thermal Resistance,Junction to Case 4.17
℃/W
R
th j-a
Thermal Resistance,Junction to Ambient70
℃/W
isc Website:
元器件交易网
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL PARAMETER
BD934/936/938/940/942
CONDITIONS MIN TYP. MAXUNIT
BD934 -45
BD936 -60
V
CEO(SUS)
Collector-Emitter
Sustaining Voltage
I
C
= -100mA ; I
B
= 0 V
BD938 -80
BD940 -100
BD942
V
CE(
sat
)
V
BE(
on
)
I
CBO
I
CEO
I
EBO
h
FE-1
h
FE-2
f
T
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
Current-Gain—Bandwidth Product
I
C
= -1A; I
B
= -0.1A
-120
40
-0.6
-1.3
-0.05
-1
-0.1
-0.2
250
V
V
mA
mA
mA
I
C
= -1A; V
CE
= -2V
V
CB
= V
CBOmax
; I
E
= 0
V
CB
= V
CBOmax
; I
E
= 0,T
J
=150℃
V
CE
= V
CEOmax
; I
B
= 0
V
EB
= -5V; I
C
= 0
I
C
= -150mA ; V
CE
= -2V
I
C
= -1A ; V
CE
= -2V
I
C
= -250mA ; V
CE
= -10V
25
3 MHz
Switching Times
t
on
t
off
Turn-On Time
I
C
= -1.0A; I
B1
= -I
B2
= -0.1A
Turn-Off Time 0.7 2.4 μs
0.2 0.6 μs
isc Website:
2
2024年9月19日发(作者:殳冰双)
元器件交易网
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistor
BD934/936/938/940/942
DESCRIPTION
·DC Current Gain-
: h
FE
= 40(Min)@ I
C
= -150mA
·Complement to Type BD933/935/937/939/941
APPLICATIONS
·Designed for use in output stages of audio and television
amplifier circuits where high peak powers can occur.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL PARAMETER VALUE UNIT
BD934-45
BD936-60
V
CBO
Collector-Base Voltage
BD938-100
V
BD940-120
BD942-140
BD934-45
BD936-60
V
CEO
Collector-Emitter Voltage
BD938-80
V
BD940-100
BD942-120
V
EBO
Emitter-Base Voltage -5 V
I
C
Collector Current-Continuous -3 A
I
CM
Collector Current-Peak -7 A
I
B
Base Current-Continuous -0.5 A
P
Collector Power Dissipation
C
@ T
C
=25℃
30 W
T
J
Junction Temperature 150
℃
T
stg
Storage Temperature Range -65~150
℃
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAXUNIT
R
th j-c
Thermal Resistance,Junction to Case 4.17
℃/W
R
th j-a
Thermal Resistance,Junction to Ambient70
℃/W
isc Website:
元器件交易网
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL PARAMETER
BD934/936/938/940/942
CONDITIONS MIN TYP. MAXUNIT
BD934 -45
BD936 -60
V
CEO(SUS)
Collector-Emitter
Sustaining Voltage
I
C
= -100mA ; I
B
= 0 V
BD938 -80
BD940 -100
BD942
V
CE(
sat
)
V
BE(
on
)
I
CBO
I
CEO
I
EBO
h
FE-1
h
FE-2
f
T
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
Current-Gain—Bandwidth Product
I
C
= -1A; I
B
= -0.1A
-120
40
-0.6
-1.3
-0.05
-1
-0.1
-0.2
250
V
V
mA
mA
mA
I
C
= -1A; V
CE
= -2V
V
CB
= V
CBOmax
; I
E
= 0
V
CB
= V
CBOmax
; I
E
= 0,T
J
=150℃
V
CE
= V
CEOmax
; I
B
= 0
V
EB
= -5V; I
C
= 0
I
C
= -150mA ; V
CE
= -2V
I
C
= -1A ; V
CE
= -2V
I
C
= -250mA ; V
CE
= -10V
25
3 MHz
Switching Times
t
on
t
off
Turn-On Time
I
C
= -1.0A; I
B1
= -I
B2
= -0.1A
Turn-Off Time 0.7 2.4 μs
0.2 0.6 μs
isc Website:
2